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US 2026/0305316 A1Published application
Electrostatic discharge (esd) circuits using front end (fe) diodes and metal-in-metal (mim) via fuses in interconnect layers
AssigneeIntel Corporation
InventorYao-Feng Chang
Life of this patent
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Abstract
In one embodiment, an electrostatic discharge (ESD) detection circuit includes diodes in the front end (FE) or device layer of an integrated circuit structure and metal-insulator-metal (MIM) via fuses within interconnect metallization layers of the integrated circuit structure. The MIM via fuses include a fuse material layer between a metallization feature of a first interconnect metallization layer and a second interconnect metallization layer.
Claims20
An integrated circuit structure comprising:
- a device layer and a plurality of interconnect layers over the device layer;
- wherein the device layer comprises diodes and the plurality of interconnect layers comprise a fuse conductively coupled to the diodes, the fuse comprising:
- a first metallization structure of a first metallization layer of the interconnect layers;
- a second metallization structure of a second metallization layer of the interconnect layers, the second metallization layer adjacent to the first metallization structure;
- and
- a layer comprising oxygen between the first metallization structure and the second metallization structure.
3 more elements
An integrated circuit device, comprising:
- a device layer comprising diodes and transistors;
- interconnect layers over the device layer, the interconnect layers comprising metal-insulator-metal (MIM) fuses, the MIM fuses comprising a fuse layer between a first metallization structure of a first interconnect layer and a second metallization structure of a second interconnect layer adjacent the first interconnect layer;
- and
- a plurality of conductive contacts on a surface of the device opposite the device layer;
- wherein:
- a first MIM fuse is conductively coupled to a first conductive contact and a second conductive contact conductive;
- and
- a second MIM fuse is conductively coupled to the first conductive contact and to a plurality of diodes in the device layer.
5 more elements
A system comprising:
- memory;
- a processor comprising an electrostatic discharge (ESD) detection circuit, the ESD detection circuit comprising:
- diodes in a device layer of the processor;
- and
- metal-insulator-metal (MIM) fuses in interconnect layers of the processor, the MIM fuses comprising a via between a metallization structure of a first interconnect layer and a metallization structure of a second interconnect layer, the via comprising a fuse material layer to form an open circuit between the metallization structures in response to a current of less than 10 mA;
- and
- power circuitry to provide power to the processor and memory.
4 more elements
Dependencies are inferred from the claim text.