Semiconductor structure and method of preventing charging damage thereof

A semiconductor structure comprises:

• a substrate;
• a deep N-well formed in said substrate;
• a first well formed in said deep N-well;
• a first gate formed on said first well;
• a first source and a first drain formed respectively at two sides of said first gate in said first well;
• a first doped region formed in said first well;
• a metal interconnect electrically connecting with said first source and said first doped region;
• and
• a protection diode with a second well formed in said substrate and a second doped region formed in said second well, wherein said metal interconnect is electrically connected with said second doped region of said protection diode.

A method of preventing a semiconductor structure from charging damage, comprising:

• providing a semiconductor structure, said semiconductor structure comprises:
• a substrate;
• a deep N-well formed in said substrate;
• a first well formed in said deep N-well;
• a first gate formed on said first well;
• a first source and a first drain formed respectively at two sides of said first gate in said first well;
• and
• a first doped region formed in said first well;
• providing a metal interconnect electrically connecting with said first source and said first doped region;
• and
• providing a semiconductor device with a second gate formed on a third well as well as a second source and a second drain formed respectively at two sides of said second gate in said third well, wherein said first gate is electrically connected with said second source.