H10D 89/921
Characterised by the configuration of the interconnections connecting the protective arrangements
Official title: {characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses}
H10D89/921 (Characterised by the configuration of the interconnections connecting the protective arrangements) appears on 579 US grants and 704 published applications in this corpus.
Search patents in H10D- Granted patents
- 579
- Published applications
- 704
- Assignees
- 209
- Inventors
- 1,252
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 5 |
| 2003 | 8 | 6 |
| 2004 | 7 | 5 |
| 2005 | 6 | 12 |
| 2006 | 7 | 12 |
| 2007 | 7 | 5 |
| 2008 | 8 | 6 |
| 2009 | 2 | 2 |
| 2010 | 6 | 6 |
| 2011 | 3 | 3 |
| 2012 | 4 | 6 |
| 2013 | 3 | 14 |
| 2014 | 10 | 18 |
| 2015 | 20 | 30 |
| 2016 | 33 | 35 |
| 2017 | 42 | 55 |
| 2018 | 40 | 54 |
| 2019 | 53 | 55 |
| 2020 | 49 | 57 |
| 2021 | 50 | 63 |
| 2022 | 53 | 58 |
| 2023 | 43 | 62 |
| 2024 | 49 | 54 |
| 2025 | 47 | 54 |
| 2026 | 25 | 26 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Circuit for preventing current backflow, chip, and electronic system6 Oct 2026US 12,757,498 B2Realtek Semiconductor Corp.
- Input/output port circuit and chip thereof22 Sep 2026US 12,745,467 B2Realtek Semiconductor Corp.
- Two-dimensional power clamp cell8 Sep 2026US 12,733,263 B2Mediatek Inc.
- Semiconductor device with input protection1 Sep 2026US 12,726,020 B2Infineon Technologies AG
- Transceiver architecture with low kick-back noise and pad cap25 Aug 2026US 12,720,873 B2SanDisk Technologies LLC
- Integrated circuit device8 Oct 2026US 2026/0314081 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor integrated circuit device including plasma induced damage protection device8 Oct 2026US 2026/0314082 A1SK hynix Inc.
- Semiconductor device with low leakage antenna diode10 Sep 2026US 2026/0271406 A1
- Electrostatic discharge dissipation field-effect transistor (esddfet) having a body without lightly doped pocket or a halo region to increase breakdown voltage27 Aug 2026US 2026/0255689 A1QUALCOMM Incorporated
- Semiconductor integrated circuit6 Aug 2026US 2026/0231535 A1Canon Kabushiki Kaisha
Most cited
By later US patents
- ESD bus lines in CMOS IC's for whole-chip ESD protection134US 6,144,542 ATaiwan Semiconductor Manufacturing Company.Ltd · 2000
- Electrostatic discharge protection circuitry and method of operation102US 6,724,603 B2Motorola, Inc. · 2004
- Electrostatic discharge protection circuits for mixed voltage interface and multi-rail disconnected power grid applications63US 5,945,713 AInternational Business Machines Corporation · 1999
- Electrostatic discharge protection structures having high holding current for latch-up immunity58US 6,803,633 B2Sarnoff Corporation · 2004
- Direct power-to-ground ESD protection with an electrostatic common-discharge line47US 6,756,834 B1Pericom Semiconductor Corp. · 2004