Semiconductor device with low leakage antenna diode
OwnerYi-Yang Chao, Hsing-Kan Peng +4inventors
InventorsYi-Yang Chao, Hsing-Kan Peng, Pin-Dai Sue, Che-Wei Chang, Chia-En Huang, Ting-Wei Chiang
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Abstract
A semiconductor device with a low leakage antenna diode is provided. The semiconductor device includes a semiconductor substrate and a n-well and a p-well formed in or on the substrate. A first circuit element is formed in or on the n-well. An antenna diode formed in or on the p-well. A punch through mitigation structure is formed between the first circuit element and the antenna diode. The punch through mitigation structure is configured to mitigate a punch through current between the first circuit element and the antenna diode.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a n-well in or on the substrate;
- a p-well in or on the substrate;
- a first circuit element formed in or on the n-well;
- an antenna diode formed in or on the p-well;
- and
- a punch through mitigation structure formed between the first circuit element and the antenna diode, wherein the punch through mitigation structure comprises a first cut metal gate structure formed between the first circuit element and the antenna diode, and wherein the first cut metal gate structure comprises a Source/Drain (S/D) structure with dopants replaced with an insulating material.
A semiconductor device comprising:
- a semiconductor substrate;
- a p-type doped region formed in or on the substrate;
- a n-type doped region formed in or on the substrate;
- a first circuit element formed in or on the n-type doped region;
- an antenna diode formed in or on the p-type doped region;
- and
- a first cut metal gate structure formed between the first circuit element and the antenna diode, wherein the first cut metal gate structure comprises a Source/Drain (S/D) structure with dopants replaced with an insulating material.
A method of making a semiconductor device, comprising:
- forming a p-well and a n-well on or in a substrate;
- forming gate features on or in the p-well and the n-well;
- forming source/drain features on or in the p-well and the n-well, wherein forming the source/drain features comprises:
- forming a first circuit element in or on the n-well, and
- forming an antenna diode in or on the p-well;
- and
- forming a punch through mitigation structure between the first circuit element and the antenna diode, wherein the punch through mitigation structure comprises a first cut metal gate structure formed between the first circuit element and the antenna diode, and wherein the first cut metal gate structure comprises a Source/Drain (S/D) structure with dopants replaced with an insulating material.
Dependencies are inferred from the claim text.