H10D 89/819
Bias arrangements for gate electrodes of fets
Official title: {Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits (FETs in a Darlington configuration H10D89/817)}
H10D89/819 (Bias arrangements for gate electrodes of fets) appears on 444 US grants and 528 published applications in this corpus.
Search patents in H10D- Granted patents
- 444
- Published applications
- 528
- Assignees
- 205
- Inventors
- 854
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 3 |
| 2003 | 6 | 5 |
| 2004 | 2 | 7 |
| 2005 | 6 | 13 |
| 2006 | 7 | 7 |
| 2007 | 10 | 16 |
| 2008 | 11 | 11 |
| 2009 | 7 | 12 |
| 2010 | 14 | 14 |
| 2011 | 9 | 15 |
| 2012 | 9 | 27 |
| 2013 | 22 | 22 |
| 2014 | 25 | 16 |
| 2015 | 19 | 24 |
| 2016 | 25 | 23 |
| 2017 | 17 | 32 |
| 2018 | 20 | 28 |
| 2019 | 37 | 32 |
| 2020 | 25 | 35 |
| 2021 | 38 | 28 |
| 2022 | 30 | 46 |
| 2023 | 38 | 25 |
| 2024 | 28 | 30 |
| 2025 | 25 | 30 |
| 2026 | 13 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
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