H10D 89/815
Involving a parasitic bipolar transistor triggered by the local electrical biasing of
Official title: {involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base region of said parasitic bipolar transistor}
H10D89/815 (Involving a parasitic bipolar transistor triggered by the local electrical biasing of) appears on 195 US grants and 191 published applications in this corpus.
Search patents in H10D- Granted patents
- 195
- Published applications
- 191
- Assignees
- 97
- Inventors
- 351
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 5 | 0 |
| 2002 | 7 | 5 |
| 2003 | 4 | 7 |
| 2004 | 6 | 15 |
| 2005 | 11 | 7 |
| 2006 | 4 | 4 |
| 2007 | 5 | 5 |
| 2008 | 4 | 3 |
| 2009 | 5 | 2 |
| 2010 | 2 | 2 |
| 2011 | 4 | 5 |
| 2012 | 5 | 10 |
| 2013 | 7 | 8 |
| 2014 | 16 | 13 |
| 2015 | 9 | 12 |
| 2016 | 15 | 8 |
| 2017 | 10 | 12 |
| 2018 | 8 | 11 |
| 2019 | 15 | 12 |
| 2020 | 10 | 18 |
| 2021 | 15 | 10 |
| 2022 | 7 | 3 |
| 2023 | 5 | 4 |
| 2024 | 7 | 9 |
| 2025 | 2 | 4 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- ESD protection circuit113US 6,897,536 B2Fujitsu Limited · 2005
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