H10D 88/101
Comprising components on opposite major surfaces of semiconductor substrates
Official title: {comprising components on opposite major surfaces of semiconductor substrates}
H10D88/101 (Comprising components on opposite major surfaces of semiconductor substrates) appears on 301 US grants and 355 published applications in this corpus.
Search patents in H10D- Granted patents
- 301
- Published applications
- 355
- Assignees
- 116
- Inventors
- 568
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 3 |
| 2003 | 2 | 4 |
| 2004 | 3 | 2 |
| 2005 | 2 | 0 |
| 2006 | 1 | 2 |
| 2007 | 0 | 0 |
| 2008 | 0 | 7 |
| 2009 | 3 | 5 |
| 2010 | 4 | 8 |
| 2011 | 8 | 8 |
| 2012 | 8 | 8 |
| 2013 | 12 | 16 |
| 2014 | 19 | 16 |
| 2015 | 18 | 31 |
| 2016 | 22 | 21 |
| 2017 | 19 | 21 |
| 2018 | 20 | 27 |
| 2019 | 22 | 24 |
| 2020 | 13 | 22 |
| 2021 | 23 | 26 |
| 2022 | 19 | 23 |
| 2023 | 23 | 27 |
| 2024 | 17 | 28 |
| 2025 | 21 | 17 |
| 2026 | 7 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor storage device and manufacturing method thereof29 Sep 2026US 12,751,278 B2Kioxia Corporation
- Semiconductor devices including backside capacitors and methods of manufacture11 Aug 2026US 12,707,963 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gallium nitride (GaN) epitaxy on patterned substrate for integrated circuit technology30 Jun 2026US 12,672,355 B2Intel Corporation
- Power semiconductor device, method of producing a power semiconductor device and method of operating a power semiconductor device28 Apr 2026US 12,615,793 B2Infineon Technologies AG
- Structure of semiconductor device and method for fabricating the same31 Mar 2026US 12,593,612 B2United Microelectronics Corp.
- Semiconductor device having self-aligned interconnect structure2 Jul 2026US 2026/0190970 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuits (ics) including power amplifier circuits and back side passive components and methods of making25 Jun 2026US 2026/0182329 A1QUALCOMM Incorporated
- Three dimensional transistors with improved characteristics and methods of fabricating same11 Jun 2026US 2026/0164777 A1
- Stacked fet with recessed channel transistors at bottom26 Mar 2026US 2026/0090109 A1International Business Machines Corporation
- Bifacial semiconductor wafer26 Mar 2026US 2026/0090353 A1SanDisk Technologies LLC
Most cited
By later US patents
- Three-dimensional integrated circuit and manufacturing method thereof617US 4,939,568 AFujitsu Limited · 1990
- Active matrix using hybrid integrated circuit and bipolar transistor272US 8,906,755 B1International Business Machines Corporation · 2014
- Method for fabrication of a semiconductor device and structure105US 8,058,137 B1Monolithic 3D Inc. · 2011
- Semiconductor device, structure and methods102US 9,640,531 B1Monolithic 3D Inc. · 2017
- Method for fabrication of a semiconductor device and structure69US 8,298,875 B1Monolithic 3D Inc. · 2012