Back to results
US 2026/0090109 A1Published application
Stacked fet with recessed channel transistors at bottom
AssigneeInternational Business Machines Corporation
InventorsJuntao Li, Ruilong Xie, Tao Li, Nicolas Jean Loubet, Julien Frougier
Life of this patent
Estimating the term…
Abstract
Embodiments of the invention disclose semiconductor structures and a method of making the semiconductor structures. According to an embodiment, the semiconductor structure may include a frontside transistor layer having one or more transistors and a backside transistor layer having at least one transistor, the at least one transistor having a recessed channel.
Claims20
A semiconductor structure comprising:
- a frontside transistor layer having one or more transistors;
- and
- a backside transistor layer having at least one transistor, the at least one transistor having a recessed channel.
A semiconductor structure comprising:
- a first transistor layer having at least one transistor, the at least one transistor having a recessed channel;
- and
- a second transistor layer having one or more transistors formed above the first transistor layer.
A method of forming a semiconductor structure comprising:
- forming a nanosheet (NS) stack over a silicon on insulator (SOI), wherein an etch stop layer divides the SOI into a lower substrate portion and an upper substrate portion;
- forming nanosheet transistors using the NS stack;
- forming a frontside interconnect for the nanosheet transistors;
- bonding to a carrier wafer;
- flipping the carrier wafer;
- removing the lower substrate portion up to the etch stop layer;
- removing the etch stop layer;
- forming a recessed channel into the upper substrate portion;
- forming gate dielectric and gate metal into the recessed channel;
- forming transistors in the recessed channel by patterning the gate metal, forming gate spacers, and performing low-temperature trench epi;
- and
- forming a backside contact and a backside interconnect for the transistors in the recessed channel.
9 more elements
Dependencies are inferred from the claim text.