Method for fabrication of a semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar, Brian Cronquist, Israel Beinglass, Jan Lodewijk de Jong
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor wafer, the method including: providing a base wafer including a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of the metal layers, wherein the monocrystalline layer includes second alignment marks; and performing a lithography using at least one of the first alignment marks in a first direction and at least one of the second alignment marks in a second direction.
Claims20
A method of manufacturing a semiconductor wafer, the method comprising:
- providing a base wafer comprising a semiconductor substrate, metal layers and first alignment marks;
- transferring a monocrystalline layer on top of said metal layers, wherein said monocrystalline layer comprises second alignment marks;
- and
- performing a lithography using at least one of said first alignment marks in a first direction and at least one of said second alignment marks in a second direction.
A method of manufacturing a semiconductor wafer, the method comprising:
- providing a base wafer comprising a semiconductor substrate, metal layers, and first alignment marks;
- preparing a monocrystalline layer comprising semiconductor regions comprising transistors, and second alignment marks;
- performing layer transfer of said monocrystalline layer on top of said metal layers;
- and
- performing gate replacement to at least one of said transistors.
A method of manufacturing a semiconductor wafer, the method comprising:
- providing a base wafer comprising a semiconductor substrate, metal layers, and first alignment marks;
- preparing a monocrystalline layer comprising semiconductor regions, and second alignment marks;
- performing layer transfer of said monocrystalline layer, first to a carrier and then on top of said metal layers;
- and
- performing gate replacement in said monocrystalline layer.
Dependencies are inferred from the claim text.