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US 9,640,531 B1Granted
Semiconductor device, structure and methods
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Brian Cronquist
Life of this patent
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Abstract
A 3D semiconductor device, including: a first layer including first transistors; a second layer overlaying the first layer, the second layer including second transistors, where the second layer includes at least one thru layer via with a diameter less than 200 nm, where the second layer includes an oscillator, and where the oscillator has a frequency stability of less than 100 ppm error/° C.
Claims20
A monolithic 3D semiconductor device, comprising:
- a first layer comprising first transistors;
- a second layer overlaying said first layer, said second layer comprising second transistors,
- wherein said second layer comprises at least one thru layer via with a diameter less than 200 nm,
- wherein said second layer comprises an oscillator, and
- wherein said oscillator has a frequency stability of less than 100 ppm error/° C.
2 more elements
A monolithic 3D semiconductor device, comprising:
- a first layer comprising first transistors;
- a second layer overlaying said first layer, said second layer comprising second transistors,
- wherein said second layer comprises at least one thru layer via with a diameter less than 200 nm,
- wherein said second layer comprises a radio frequency (RF) circuit, and
- wherein said radio frequency (RF) circuit has substrate losses less than 0.15 dB/mm at 2 GHz.
2 more elements
A monolithic 3D semiconductor device, comprising:
- a first layer comprising first transistors;
- a second layer overlaying said first layer, said second layer comprising second transistors,
- wherein said second layer comprises at least one thru layer via with a diameter less than 200 nm,
- wherein said second layer comprises a radio frequency (RF) circuit, and
- wherein said device comprises an EMI shield structure disposed between said radio frequency (RF) circuit and at least one of said first transistors,
- wherein said EMI shield structure provides shielding between said first transistors and said radio frequency (RF) circuit.
3 more elements
Dependencies are inferred from the claim text.