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US 2026/0190970 A1Published application
Semiconductor device having self-aligned interconnect structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yu LAI, Chih-Liang CHEN, Chi-Yu LU, Shang-Syuan CIOU, Hui-Zhong ZHUANG, Ching-Wei TSAI, Shang-Wen CHANG
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Abstract
A semiconductor structure includes a top transistor device stacked on a bottom transistor device. The semiconductor structure further includes a via in direct contact with a top electrode of the top transistor device and a bottom electrode of the bottom transistor device. The semiconductor structure further includes a top contact directly contacting the top electrode of the top transistor device.
Claims20
A semiconductor structure comprising:
- a top transistor device stacked on a bottom transistor device;
- a via in direct contact with a top electrode of the top transistor device and a bottom electrode of the bottom transistor device;
- and
- a top contact directly contacting the top electrode of the top transistor device.
1 more element
A semiconductor structure comprising:
- a top transistor device stacked on a bottom transistor device;
- a via in direct contact with a top electrode of the top transistor device and a bottom electrode of the bottom transistor device;
- a top interconnect structure, wherein the top transistor device is between the top interconnect structure and the bottom transistor device;
- a bottom interconnect structure, wherein the bottom transistor device is between the bottom interconnect structure and the top transistor device;
- and
- a top contact directly contacting the top electrode, wherein the top contact is electrically connected to the top interconnect structure.
3 more elements
A semiconductor structure comprising:
- a top transistor device stacked on a bottom transistor device, wherein the top transistor device is separated from the bottom transistor device in a first direction;
- a via in direct contact with a top electrode of the top transistor device and a bottom electrode of the bottom transistor device, wherein the top electrode has a first width in a second direction perpendicular to the first direction, and the bottom electrode has a second width in the second direction;
- a second top electrode of the top transistor device having a third width in the second direction, and the third width is less than the first width;
- and
- a top contact directly contacting the top electrode, wherein the top contact is electrically connected to the top interconnect structure.
2 more elements
Dependencies are inferred from the claim text.