Gallium nitride (GaN) epitaxy on patterned substrate for integrated circuit technology

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a material layer comprising gallium and nitrogen, the material layer having a first side and a second side opposite the first side;
• a plurality of semiconductor fins on the first side of the material layer, the plurality of semiconductor fins comprising silicon, each of the plurality of semiconductor fins in direct contact with and entirely above the first side of the material layer, wherein individual ones of the plurality of semiconductor fins are discontinuous with one another;
• and
• a device layer on the second side of the material layer, the device layer comprising one or more GaN-based devices.

A method of fabricating an integrated circuit structure, the method comprising:

• forming a material layer comprising gallium and nitrogen, the material layer having a first side and a second side opposite the first side;
• forming a plurality of semiconductor fins on the first side of the material layer, the plurality of semiconductor fins comprising silicon, each of the plurality of semiconductor fins in direct contact with and entirely above the first side of the material layer, wherein individual ones of the plurality of semiconductor fins are discontinuous with one another;
• and
• forming a device layer on the second side of the material layer, the device layer comprising one or more GaN-based devices.

An integrated circuit structure, comprising:

• a material layer comprising gallium and nitrogen, the material layer having a first side and a second side opposite the first side;
• a plurality of semiconductor fins on the first side of the material layer, the plurality of semiconductor fins comprising silicon, wherein individual ones of the plurality of semiconductor fins are discontinuous with one another;
• and
• a device layer on the second side of the material layer, the device layer comprising one or more GaN-based devices, wherein the device layer is bonded to a second device layer comprising silicon, the second device layer comprising one or more Si-based devices.

An integrated circuit structure, comprising:

• a material layer comprising gallium and nitrogen, the material layer having a first side and a second side opposite the first side;
• a plurality of semiconductor fins on the first side of the material layer, the plurality of semiconductor fins comprising silicon, wherein individual ones of the plurality of semiconductor fins are discontinuous with one another;
• and
• a device layer on the second side of the material layer, the device layer comprising one or more GaN-based devices, wherein a component is included in a spacing between a pair of the plurality of semiconductor fins, the component selected from the group consisting of a through silicon via, a metal-insulator-metal capacitor, and a resonator.