H10D 84/931
Fet isolation
Official title: {FET isolation}
H10D84/931 (Fet isolation) appears on 63 US grants and 84 published applications in this corpus.
Search patents in H10D- Granted patents
- 63
- Published applications
- 84
- Assignees
- 23
- Inventors
- 148
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 2 | 1 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 2 | 2 |
| 2015 | 1 | 2 |
| 2016 | 2 | 0 |
| 2017 | 2 | 3 |
| 2018 | 5 | 5 |
| 2019 | 3 | 8 |
| 2020 | 10 | 10 |
| 2021 | 4 | 5 |
| 2022 | 6 | 8 |
| 2023 | 3 | 9 |
| 2024 | 7 | 10 |
| 2025 | 8 | 10 |
| 2026 | 5 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure and manufacturing method thereof11 Aug 2026US 12,707,683 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Self-aligned backside interconnect structures14 Jul 2026US 12,684,873 B2International Business Machines Corporation
- Integrated circuit device and method of forming the same26 May 2026US 12,641,875 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Logic cell structure with diffusion box24 Mar 2026US 12,588,276 B2Arm Limited
- Integrated circuit and method of forming the same10 Mar 2026US 12,575,187 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof8 Oct 2026US 2026/0313980 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device1 Oct 2026US 2026/0304952 A1Samsung Electronics Co., Ltd.
- Integrated circuit including out-wall area and in-wall area11 Jun 2026US 2026/0164788 A1Samsung Electronics Co., Ltd.
- Mask, integrated circuit, and method of controlling threshold voltages of the integrated circuit by using the mask11 Jun 2026US 2026/0165048 A1Samsung Electronics Co., Ltd.
- Integrated circuit devices14 May 2026US 2026/0136664 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Double buffer base gate array cell132US 5,420,447 ASGS-Thomson Microelectronics S.A. · 1995
- Standard cell, standard cell library, and semiconductor integrated circuit with suppressed variation in characteristics124US 7,538,368 B2Panasonic Corporation · 2009
- Semiconductor device24US 9,887,210 B2Samsung Electronics Co., Ltd. · 2018
- Shared-diffusion standard cell architecture16US 8,836,040 B2QUALCOMM Incorporated · 2014
- Methods for improving double patterning route efficiency16US 8,881,083 B1Globalfoundries Inc. · 2014