Integrated circuit and method of forming the same

An integrated circuit, comprising:

• a first active region extending in a first direction, and being on a first level of a substrate;
• a second active region extending in the first direction, and being on the first level of the substrate, and being separated from the first active region in a second direction different from the first direction;
• a floating gate extending in the second direction, being located on a second level above the first level, and overlapping the second active region, and the floating gate being electrically floating;
• a first dummy gate extending in the second direction, being located on the second level, and being separated from the floating gate in the second direction, and the first dummy gate and the floating gate separating a first cell from a second cell in the integrated circuit, wherein the first cell corresponds to a first transistor, and the second cell corresponds to a second transistor;
• a first conductor and a second conductor extending in the second direction, being on a third level different from the first level and the second level, and being separated from each other in the first direction, and overlapping the second active region, the first conductor and the second conductor being electrically coupled to a corresponding source and a corresponding drain of the second active region, and the first conductor and the second conductor being configured to supply a same signal or a same supply voltage to the corresponding source and the corresponding drain of the second active region, and the floating gate is between the first conductor and the second conductor;
• and
• a third conductor extending in the first direction, being located on a fourth level different from the first level, the second level and the third level, the third conductor being configured to supply a first supply voltage or a first signal;
• wherein the first transistor is part of a first inverter of a flip-flop;
• and
• the second transistor is part of a latch of the flip-flop.

An integrated circuit comprising:

• a first active region extending in a first direction, and being on a first level of a substrate;
• a second active region extending in the first direction, and being on the first level of the substrate, and being separated from the first active region in a second direction different from the first direction;
• a floating gate extending in the second direction, being located on a second level different from the first level, and overlapping the second active region, and the floating gate being electrically floating;
• a first dummy gate overlapping the first active region, extending in the second direction, being located on the second level, and being separated from the floating gate in the second direction by a first distance, and the first dummy gate and the floating gate separating a first cell from a second cell in the integrated circuit, wherein the first cell corresponds to a first transistor, and the second cell corresponds to a second transistor;
• and
• a first conductor and a second conductor extending in the second direction, being on a third level different from the first level and the second level, being separated from each other in the first direction, and overlapping the second active region, the first conductor and the second conductor being electrically coupled to a corresponding source and a corresponding drain of the second active region, and the first conductor and the second conductor being configured to supply a same supply voltage to the corresponding source and the corresponding drain of the second active region, and the floating gate is between the first conductor and the second conductor;
• wherein the first transistor is part of a first inverter of a flip-flop;
• and
• the second transistor is part of a latch of the flip-flop.