US 12,641,875 B2 · Integrated circuit device and method of forming the same

Abstract

An integrated circuit device includes a first device and a second device. The first device is disposed within a first circuit region, the first device including a plurality of first semiconductor strips extending longitudinally in a first direction. Adjacent ones of the plurality of first semiconductor strips are spaced apart from each other in a second direction, which is generally perpendicular to the first direction. The second device is disposed within a second circuit region, the second circuit region being adjacent to the first circuit region in the first direction. The second device includes a second semiconductor strip extending longitudinally in the first direction. A projection of a longitudinal axis of the second semiconductor strip along the first direction lies in a space separating the adjacent ones of the plurality of first semiconductor strips.

Claims20

Dependent claims

A method to form an integrated circuit (IC) structure with mandrel and spacer patterning, comprising:

forming a mandrel layer that includes three line segments, a first mandrel line segment disposed in a first circuit region and oriented in a first direction, a second mandrel line segment disposed in a second circuit region and oriented in the first direction, the second mandrel line segment being shifted from the first mandrel line segment along a second direction being orthogonal to the first direction, and a third mandrel line segment disposed in a gap region connecting the first mandrel line segment and the second mandrel line segment, wherein the third mandrel line segment is oriented in a third direction different from the first direction and the second direction;
forming spacers on sidewalls of the mandrel layer;
removing the mandrel layer;
and
removing portions of the spacers, resulting in patterned spacers that include a first subset in the first circuit region and oriented in the first direction and a second subset in the second circuit region and oriented in the first direction.

2 more elements

An integrated circuit device, comprising:

a semiconductor substrate;
a first device disposed within a first circuit region, the first device including a plurality of first semiconductor strips vertically extending from the semiconductor substrate and extending longitudinally in a first direction, and a first gate stack disposed on the plurality of first semiconductor strips, wherein adjacent ones of the plurality of first semiconductor strips are spaced apart from each other in a second direction, the second direction being generally perpendicular to the first direction;
and
a second device disposed within a second circuit region, the second circuit region being adjacent to the first circuit region in the first direction, the second device including a single semiconductor strip vertically extending from the semiconductor substrate and extending longitudinally in the first direction, and a second gate stack disposed on the single semiconductor strip, wherein a projection of each longitudinal edge of the single semiconductor strip along the first direction lies in a space separating the adjacent ones of the plurality of first semiconductor strips, each of the first gate stack and the second gate stack extending longitudinally in the second direction.

1 more element

Dependencies are inferred from the claim text.

Integrated circuit device and method of forming the same

Life of this patent

Integrated circuit device and method of forming the same

Life of this patent

Abstract

Claims20