Logic cell structure with diffusion box
AssigneeArm Limited
InventorsRakshith C, Denil Das Kolady, Ashwani Kumar Srivastava
Life of this patent
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Abstract
Various implementations described herein refer to a device having a cell structure with multiple transistors including active n-type transistors and active p-type transistors disposed together within a cell boundary. The active n-type transistors may have a first diffusion region formed within the cell boundary at a first end of the cell structure. The active p-type transistors may have a second diffusion region formed within the cell boundary at a second end of the cell structure. The active p-type transistors may have a vacated region cut-out from the second diffusion region, and/or the active n-type transistors may have a vacated region cut-out from the first diffusion region.
Claims13
A device comprising:
- a cell structure having multiple transistors, wherein the multiple transistors comprise:
- active n-type transistors and active p-type transistors disposed together within a cell boundary;
- a first inactive transistor placed at a first side of the cell boundary;
- and
- a second inactive transistor placed at a second side of the cell boundary;
- wherein the active n-type transistors have a first diffusion region formed within the cell boundary at a first end of the cell structure;
- and
- wherein the active p-type transistors, the first inactive transistor and the second inactive transistor have a second diffusion region formed within the cell boundary at a second end of the cell structure, wherein the second diffusion region is continuous and comprises a vacated region disposed between, excluding, the first and second inactive transistors.
Dependencies are inferred from the claim text.