H10D 84/922
Relative p to n transistor sizes
Official title: {relative P to N transistor sizes}
H10D84/922 (Relative p to n transistor sizes) appears on 22 US grants and 44 published applications in this corpus.
Search patents in H10D- Granted patents
- 22
- Published applications
- 44
- Assignees
- 14
- Inventors
- 107
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2013 | 1 | 1 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 4 |
| 2018 | 3 | 0 |
| 2019 | 1 | 4 |
| 2020 | 4 | 1 |
| 2021 | 1 | 5 |
| 2022 | 3 | 3 |
| 2023 | 2 | 5 |
| 2024 | 3 | 3 |
| 2025 | 3 | 6 |
| 2026 | 1 | 12 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Systems and methods for providing reliable physically unclonable functions26 May 2026US 12,640,941 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device1 Apr 2025US 12,266,659 B2Samsung Electronics Co., Ltd.
- Cell architecture with extended transistor geometry28 Jan 2025US 12,211,850 B2Texas Instruments Incorporated
- Logic cell with small cell delay7 Jan 2025US 12,191,310 B2Mediatek Inc.
- IC including standard cells and SRAM cells3 Dec 2024US 12,159,872 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device1 Oct 2026US 2026/0304952 A1Samsung Electronics Co., Ltd.
- Systems and methods for providing reliable physically unclonable functions17 Sep 2026US 2026/0280906 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same13 Aug 2026US 2026/0239735 A1Samsung Electronics Co., Ltd.
- Semiconductor structure with reduced nanosheets and method of manufacturing the same6 Aug 2026US 2026/0231526 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of fabricating the same23 Jul 2026US 2026/0214983 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Fast magnetoelectric device based on current-driven domain wall propagation90US 10,217,522 B2Regents of the University of Minnesota · 2019
- Selectively recessing trench isolation in three-dimensional (3D) transistors to vary channel structure exposures from trench isolation to control drive strength12US 10,109,646 B1QUALCOMM Incorporated · 2018
- Semiconductor structure5US 10,685,982 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2020
- Semiconductor integrated circuit device having a plurality of standard cells for leakage current suppression4US 8,525,552 B2Panasonic Corporation · 2013
- IC including standard cells and SRAM cells2US 10,825,835 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2020