Semiconductor device and method of fabricating the same

A semiconductor device, comprising:

• a first power line and a second power line disposed on a substrate and spaced apart from each other in a first direction parallel to a top surface of the substrate;
• a first standard cell defined between the first power line and the second power line;
• a second standard cell adjacent to the first standard cell in the first direction;
• a first wide cell adjacent to the first standard cell;
• a first active pattern extended from the first standard cell to the first wide cell;
• a second active pattern extended in the first standard cell;
• a third active pattern extended from the second standard cell to the first wide cell;
• and
• a fourth active pattern extended in the second standard cell,
• wherein the first wide cell is spaced apart from the fourth active pattern in the first direction,
• wherein a width of a top surface of the first active pattern in the first wide cell is larger than a width of a top surface of the first active pattern in the first standard cell, when measured in the first direction, and
• wherein a width of a top surface of the third active pattern in the first wide cell is larger than a width of a top surface of the third active pattern in the second standard cell.

A semiconductor device, comprising:

• a first power line and a second power line disposed on a substrate and spaced apart from each other in a first direction parallel to a top surface of the substrate;
• a first standard cell defined between the first power line and the second power line;
• a second standard cell adjacent to the first standard cell in the first direction;
• a third standard cell spaced apart from the first standard cell in the first direction, with the second standard cell interposed therebetween;
• a first wide cell adjacent to the first standard cell in a second direction crossing the first direction;
• and
• a second wide cell adjacent to the third standard cell in the second direction and adjacent to the first wide cell in the first direction,
• wherein a cell height of each of the first and second wide cells is 1.25 to 1.75 times a pitch between the first and second power lines.