Fast magnetoelectric device based on current-driven domain wall propagation

An electronic device comprising:

• an input ferroelectric (FE) capacitor including a first dielectric layer;
• an output FE capacitor including a second dielectric layer;
• a ferromagnetic (FM) channel positioned beneath the first dielectric layer of the input FE capacitor and positioned beneath the second dielectric layer of the output FE capacitor, wherein the FM channel forms at least part of a lower terminal of the input FE capacitor, wherein the FM channel forms at least part of a lower terminal of the output FE capacitor, wherein a magnetization state of the FM channel is configured to change in response to a voltage applied across the input FE capacitor, and wherein a change in the magnetization state of the FM channel causes a voltage change at the output FE capacitor;
• and
• an FM layer including an FM material with in-plane magnetic anisotropy (IMA-FM material), wherein the FM layer is positioned between the first dielectric layer of the input FE capacitor and the FM channel, and wherein the FM layer forms at least part of the lower terminal of the input FE capacitor.

An electronic device comprising:

• an input ferroelectric (FE) capacitor including a first dielectric layer;
• an output FE capacitor including a second dielectric layer;
• a ferromagnetic (FM) channel positioned beneath the first dielectric layer of the input FE capacitor and positioned beneath the second dielectric layer of the output FE capacitor, wherein the FM channel forms at least part of a lower terminal of the input FE capacitor, wherein the FM channel forms at least part of a lower terminal of the output FE capacitor, wherein a magnetization state of the FM channel is configured to change in response to a voltage applied across the input FE capacitor, and wherein a change in the magnetization state of the FM channel causes a voltage change at the output FE capacitor;
• a layer of high-resistivity material (HRM) positioned beneath the FM channel;
• and
• a switch electrically connected to the layer of HRM proximate the output FE capacitor or proximate the input FE capacitor, wherein the layer of HRM is configured to carry an electrical current when the switch is closed, and wherein the electrical current is configured to facilitate the change in the magnetization state of the FM channel.

An electronic device comprising:

• a ferromagnetic (FM) channel including an FM material with perpendicular magnetic anisotropy (PMA-FM material);
• an FM layer including an FM material with in-plane magnetic anisotropy (IMA-FM material) positioned above the FM channel;
• an input ferroelectric (FE) capacitor including a first dielectric layer, wherein the FM layer is positioned between the first dielectric layer of the input FE capacitor and the FM channel, and wherein the FM channel forms at least part of a lower terminal of the input FE capacitor;
• and
• an output FE capacitor including a second dielectric layer positioned above the FM channel, and wherein the FM channel forms at least part of a lower terminal of the output FE capacitor.