H10D 84/924
For current drive capability
Official title: {for current drive capability}
H10D84/924 (For current drive capability) appears on 10 US grants and 16 published applications in this corpus.
Search patents in H10D- Granted patents
- 10
- Published applications
- 16
- Assignees
- 6
- Inventors
- 38
- Latest grant
- 1 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2017 | 0 | 2 |
| 2018 | 1 | 0 |
| 2019 | 1 | 0 |
| 2020 | 1 | 0 |
| 2021 | 0 | 3 |
| 2022 | 2 | 1 |
| 2023 | 1 | 4 |
| 2024 | 2 | 1 |
| 2025 | 2 | 3 |
| 2026 | 0 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device1 Apr 2025US 12,266,659 B2Samsung Electronics Co., Ltd.
- Cell architecture with extended transistor geometry28 Jan 2025US 12,211,850 B2Texas Instruments Incorporated
- IC including standard cells and SRAM cells3 Dec 2024US 12,159,872 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming same28 May 2024US 11,995,388 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming same16 May 2023US 11,651,133 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit including multi-height cell25 Jun 2026US 2026/0182023 A1Samsung Electronics Co., Ltd.
- Multi-stack semiconductor device including channel structures having different channel widths16 Apr 2026US 2026/0107574 A1Samsung Electronics Co., Ltd.
- Semiconductor device19 Jun 2025US 2025/0204040 A1Samsung Electronics Co., Ltd.
- Cell architecture with extended transistor geometry29 May 2025US 2025/0176262 A1Texas Instruments Incorporated
- Integrated circuit20 Feb 2025US 2025/0063815 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Fast magnetoelectric device based on current-driven domain wall propagation90US 10,217,522 B2Regents of the University of Minnesota · 2019
- Selectively recessing trench isolation in three-dimensional (3D) transistors to vary channel structure exposures from trench isolation to control drive strength12US 10,109,646 B1QUALCOMM Incorporated · 2018
- IC including standard cells and SRAM cells2US 10,825,835 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2020
- IC including standard cells and SRAM cells2US 11,476,278 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Integrated circuit and method of forming same1US 11,995,388 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2024