Multi-stack semiconductor device including channel structures having different channel widths
AssigneeSamsung Electronics Co., Ltd.
InventorsBeomjin PARK, Edward Namkyu CHO, Hyo Jong SHIN, Jinyoung LIM, Kang-ill SEO
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Abstract
A multi-stack semiconductor device includes: a 1st active pattern extending in a 1st direction; a 2nd active pattern extending in the 1st direction, the 2nd active pattern being above the 1st active pattern in a 3rd direction which intersects the 1st direction and a 2nd direction intersecting the 1st direction; and a plurality of gate structures extending in the 2nd direction and arranged in the 1st direction, wherein at least one of the 1st active pattern and the 2nd active pattern has a width in the 2nd direction which varies along the 1st direction.
Claims20
A multi-stack semiconductor device comprising:
- a 1st active pattern extending in a 1st direction;
- a 2nd active pattern extending in the 1st direction, the 2nd active pattern being above the 1st active pattern in a 3rd direction which intersects the 1st direction and a 2nd direction intersecting the 1st direction;
- and
- a plurality of gate structures extending in the 2nd direction across the 1st active pattern and the 2nd active pattern and arranged in the 1st direction,
- wherein at least one of the 1st active pattern and the 2nd active pattern has a width in the 2nd direction which varies along the 1st direction.
A multi-stack semiconductor device comprising:
- a 1st channel structure comprising 1st channel layers arranged in a 3rd direction intersecting a 1st direction and a 2nd direction;
- and
- a 2nd channel structures above the 1st channel structure, the 2nd channel structure comprising 2nd channel layers arranged in the 3rd direction,
- wherein the 2nd channel structure has a smaller width than the 1st channel structure in the 2nd direction, and
- wherein a number of the 1st channel layers is greater than a number of the 2nd channel layers.
A semiconductor device comprising:
- a 1st active pattern extending in a 1st direction;
- a gate structure extending in a 2nd direction across the 1st active pattern, the 2nd direction intersecting the 1st direction;
- and
- a 2nd channel structure above the 1st channel structure in a 3rd direction intersecting a 1st direction and a 2nd direction,
- wherein the 1st channel structure has a greater height than the 2nd channel structure.
Dependencies are inferred from the claim text.