H10D 84/859
Comprising both n-type and p-type wells
Official title: {comprising both N-type and P-type wells, e.g. twin-tub}
H10D84/859 (Comprising both n-type and p-type wells) appears on 1,027 US grants and 847 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,027
- Published applications
- 847
- Assignees
- 247
- Inventors
- 1,597
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 4 | 0 |
| 1984 | 9 | 0 |
| 1985 | 7 | 0 |
| 1986 | 8 | 0 |
| 1987 | 9 | 0 |
| 1988 | 11 | 0 |
| 1989 | 11 | 0 |
| 1990 | 20 | 0 |
| 1991 | 15 | 0 |
| 1992 | 16 | 0 |
| 1993 | 23 | 0 |
| 1994 | 21 | 0 |
| 1995 | 24 | 0 |
| 1996 | 16 | 0 |
| 1997 | 11 | 0 |
| 1998 | 25 | 0 |
| 1999 | 29 | 0 |
| 2000 | 25 | 0 |
| 2001 | 18 | 3 |
| 2002 | 16 | 16 |
| 2003 | 13 | 17 |
| 2004 | 8 | 26 |
| 2005 | 22 | 28 |
| 2006 | 23 | 31 |
| 2007 | 17 | 24 |
| 2008 | 22 | 19 |
| 2009 | 17 | 18 |
| 2010 | 20 | 21 |
| 2011 | 24 | 24 |
| 2012 | 14 | 16 |
| 2013 | 21 | 20 |
| 2014 | 18 | 31 |
| 2015 | 40 | 49 |
| 2016 | 46 | 50 |
| 2017 | 62 | 52 |
| 2018 | 42 | 45 |
| 2019 | 49 | 52 |
| 2020 | 51 | 57 |
| 2021 | 42 | 49 |
| 2022 | 39 | 39 |
| 2023 | 35 | 39 |
| 2024 | 30 | 47 |
| 2025 | 30 | 48 |
| 2026 | 21 | 26 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Apparatus and test element group15 Sep 2026US 12,740,142 B2Micron Technology, Inc.
- Semiconductor device structure with backside pick-up region and method of manufacturing the same1 Sep 2026US 12,727,211 B2Nanya Technology Corporation
- Shifted-channel stacked FETs11 Aug 2026US 12,707,679 B2International Business Machines Corporation
- Fin loss prevention4 Aug 2026US 12,701,775 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Auto-doping reduction in semiconductor structure28 Jul 2026US 12,696,505 B2Texas Instruments Incorporated
- Fin loss prevention1 Oct 2026US 2026/0304913 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device and manufacturing method thereof24 Sep 2026US 2026/0293249 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof17 Sep 2026US 2026/0282370 A1Kioxia Corporation
- Semiconductor device and manufacturing method thereof17 Sep 2026US 2026/0282465 A1Kioxia Corporation
- Area-efficient fully depleted semiconductor-on-insulator structure with mixed threshold voltage transistors10 Sep 2026US 2026/0271398 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Semiconductor structure and device and methods of forming same using selective epitaxial process509US 9,240,412 B2ASM IP Holding B. V. · 2016
- Semiconductor structure and device formed using selective epitaxial process418US 10,361,201 B2ASM IP Holding B. V. · 2019
- Semiconductor wafer with well contacts on back side319US 6,864,156 B1Xilinx, Inc. · 2005
- LDD CMOS process291US 4,753,898 AMotorola, Inc. · 1988
- Multiple well transistor circuits having forward body bias225US 6,218,895 B1Intel Corporation · 2001