Multiple well transistor circuits having forward body bias

A semiconductor circuit, comprising:

• a p-substrate,
• first and second n-isolation wells in the substrate;
• a first p-well in the first n-isolation well, wherein the first n-isolation well isolates voltage in the first p-well from being influenced by voltages of materials outside the first n-isolation well, other than through taps to the first p-well, and wherein transistors are not formed in the first n-isolation well;
• a second p-well in the second n-isolation well, wherein the second n-isolation well isolates voltage in the second p-well from being influenced by voltages of materials outside the second n-isolation well, other than through taps to the second p-well and wherein transistors are not formed in the second n-isolation well;
• a first group of n-channel field effect transistors (nFETs) formed in the first p-well;
• a second group of nFETs formed in the second p-well;
• an n-well formed in the substrate, with a group of p-channel field effect transistors (pPETs) being formed in the n-well;
• and
• an additional isolator at least partially between the first n-isolation well and the n-well;
• and
• a body voltage supply to provide a body voltage to the first p-well so that the first group of nFETs are forward body biased.

A semiconductor circuit, comprising:

• a substrate of a first conductivity type;
• an isolation well of a second conductivity type in the substrate;
• a first well of a first conductivity type in the isolation well, wherein the isolation well isolates voltage in the first well of the first conductivity type from being influenced by voltages of materials outside the isolation well, other than through taps to the first well of the first conductivity type, and wherein transistors are not formed in the isolation well;
• a second well of the first conductivity type;
• a first group of field effect transistors (FETs) formed in the first well of the first conductivity type;
• a second group of FETs formed in the second well of the first conductivity type;
• a well of a second conductivity type formed in the substrate, with a group of FETs formed in the well of the second conductivity type;
• a body voltage supply to provide a body voltage to the first p-well so that the first group of FETs are forward body biased.