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US 10,361,201 B2Granted
Semiconductor structure and device formed using selective epitaxial process
AssigneeASM IP Holding B.V.
InventorsQi Xie, Vladimir Machkaoutsan, Jan Willem Maes
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Abstract
Semiconductor structures, devices, and methods of forming the structures and device are disclosed. Exemplary structures include multi-gate or FinFET structures that can include both n-channel MOS (NMOS) and p-channel MOS (PMOS) devices to form CMOS structures and devices on a substrate. The devices can be formed using selective epitaxy and shallow trench isolation techniques.
Claims9
A semiconductor structure comprising:
- a substrate comprising silicon;
- a strain relaxed buffer layer comprising Si1−xGex, where x is greater than 0 to about 0.5, overlying and in contact with the substrate;
- a p well region formed within the buffer layer;
- an n well region formed within the buffer layer;
- one or more fin structures comprising a portion of the p well region and a layer consisting of silicon, the layer consisting of silicon being disposed directly over the p well region;
- one or more fin structures comprising a portion of the n well region and a layer comprising Si1−yGey, the layer comprising Si1−yGey being disposed directly over the n well region, where y ranges from about 0.1 to 1;
- and
- an insulating layer formed directly overlying a portion of the p well region and the n well region.
5 more elements
A CMOS device comprising:
- a substrate comprising silicon;
- a strain relaxed buffer layer comprising Si1−xGex, where x is greater than 0 to about 0.5, overlying and in contact with the substrate;
- a p well region formed within the buffer layer;
- an n well region formed within the buffer layer;
- one or more fin structures comprising a portion of the p well region and a layer consisting of silicon, the layer consisting of silicon being disposed directly over the p well region;
- one or more fin structures comprising a portion of the n well region and a layer comprising Si1−yGey, the layer comprising Si1−yGey being disposed directly over the n well region, where y ranges from about 0.1 to 1;
- and
- an insulating layer formed directly overlying a portion of the p well region and the n well region.
5 more elements
Dependencies are inferred from the claim text.