Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a first structure and a second structure. First semiconductor elements are arranged in the first structure. The second structure is stacked on the first structure. The second structure includes a substrate including a first surface and a second surface opposing to each other, a first well region of a first conductivity type arranged on the side of the first surface of the substrate, a second well region of a second conductivity type arranged on the side of the first surface to be adjacent to the first well region, and a first impurity layer of the first conductivity type arranged at least on the side of the second surface of the first well region and having a higher impurity concentration than that of the first well region. A first conductor is located between the first structure and the second structure and is electrically separated from the substrate.

Dependencies are inferred from the claim text.