Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device of the embodiment includes two structures and two conductors. A plurality of first semiconductor elements are formed in the first structure. The second structure includes a substrate including a plurality of impurity diffused layers, and a plurality of second semiconductor elements located in the impurity diffused layers on the side of a first surface of the substrate, and is stacked on the first structure on the side of a second surface of the substrate on the opposite side to the first surface. The first conductor is located between the first structure and the second structure, is electrically separated from the substrate, and is electrically connected to at least one of the first semiconductor elements. The second conductor is located between the first conductor and the impurity diffused layers, and shields at least a portion of the impurity diffused layers from an electric field of the first conductor.

Dependencies are inferred from the claim text.