Semiconductor device structure with backside pick-up region and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorHsih-Yang Chiu
Life of this patent
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Abstract
A semiconductor device structure and method of manufacturing the same are provided. The semiconductor device structure includes a substrate, a first well region, a source/drain (S/D) feature, and a pick-up region. The substrate has a first surface and a second surface opposite to the first surface. The first well region abuts the second surface of the substrate and has a first conducive type. The S/D feature abuts the second surface of the substrate and has a second conductive type different from the first conductive type. The pick-up region abuts the first surface of the substrate and has the first conductive type.
Claims10
A semiconductor device structure, comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a first well region abutting the second surface of the substrate and having a first conducive type;
- a source/drain (S/D) feature abutting the second surface of the substrate and having a second conductive type different from the first conductive type;
- an isolation structure embedded within the substrate and extending from the second surface toward the first surface of the substrate;
- and
- a first pick-up region having the first conductive type situated between the first surface of the substrate and the isolation structure;
- wherein the first pick-up region is in contact with the isolation structure.
Dependencies are inferred from the claim text.