Semiconductor structure and device and methods of forming same using selective epitaxial process
AssigneeASM IP Holding B.V.
InventorsQi Xie, Vladimir Machkaoutsan, Jan Willem Maes
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Abstract
Semiconductor structures, devices, and methods of forming the structures and device are disclosed. Exemplary structures include multi-gate or FinFET structures that can include both re-channel MOS (NMOS) and p-channel MOS (PMOS) devices to form CMOS structures and devices on a substrate. The devices can be formed using selective epitaxy and shallow trench isolation techniques.
Claims20
A method of forming a semiconductor structure, the method comprising the steps of:
- providing a substrate comprising silicon;
- forming a buffer layer comprising Si1-xGex, where x ranges from 0 to about 0.8, overlying the substrate;
- using a first selective epitaxial process, forming a first feature comprising silicon overlying the buffer layer on a surface;
- and
- using a second selective epitaxial process, forming a second feature comprising Si1-yGey, where y ranges from about 0.1 to 1, on the surface,
- wherein the first feature is formed overlying a p well region in the buffer layer and the second feature is formed overlying an n well region in the buffer layer.
A method of forming a semiconductor structure, the method comprising the steps of:
- providing a substrate comprising silicon;
- forming a buffer layer comprising Si1-xGex, where x ranges from 0 to about 0.8, overlying the substrate;
- using a first selective epitaxial process, forming a first feature comprising silicon overlying the buffer layer on a surface;
- and
- using a second selective epitaxial process, forming a second feature comprising Si1-yGey, where y ranges from about 0.1 to 1, on the surface,
- wherein the step of forming a second feature comprises forming a hard mask, forming openings in the hard mask, and selectively forming the second feature within at least one of the openings, and
- wherein the hard mask overhangs the first feature.
A method of forming a semiconductor structure, the method comprising the steps of:
- providing a substrate comprising silicon;
- forming a buffer layer comprising Si1-xGex, where x ranges from 0 to about 0.8, overlying the substrate;
- using a first selective epitaxial process, forming a first feature comprising silicon overlying the buffer layer on a surface;
- using a second selective epitaxial process, forming a second feature comprising Si1-yGey, where y ranges from about 0.1 to 1, on the surface;
- and
- etching the first feature and the second feature to form one or more fins comprising silicon and one or more fins comprising Si1-yGey, where y ranges from about 0.1 to 1.
Dependencies are inferred from the claim text.