H10D 84/857
Comprising an n-type well but not a p-type well
Official title: {comprising an N-type well but not a P-type well}
H10D84/857 (Comprising an n-type well but not a p-type well) appears on 100 US grants and 63 published applications in this corpus.
Search patents in H10D- Granted patents
- 100
- Published applications
- 63
- Assignees
- 54
- Inventors
- 186
- Latest grant
- 10 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 6 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 2 | 0 |
| 2002 | 3 | 2 |
| 2003 | 1 | 0 |
| 2004 | 1 | 2 |
| 2005 | 1 | 1 |
| 2006 | 1 | 3 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 1 | 1 |
| 2010 | 2 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 2 |
| 2013 | 1 | 1 |
| 2014 | 2 | 1 |
| 2015 | 1 | 1 |
| 2016 | 3 | 4 |
| 2017 | 2 | 5 |
| 2018 | 5 | 6 |
| 2019 | 3 | 5 |
| 2020 | 6 | 7 |
| 2021 | 6 | 6 |
| 2022 | 4 | 5 |
| 2023 | 1 | 2 |
| 2024 | 4 | 5 |
| 2025 | 3 | 3 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Vertical field effect device and method of manufacturing10 Jun 2025US 12,328,895 B2Ideaded, S.L.
- Semiconductor device, method of manufacturing the same and electronic device including the device11 Mar 2025US 12,249,544 B2Institute of Microelectronics, Chinese Academy of Sciences
- Semiconductor device, method of manufacturing the same and electronic device including the same4 Mar 2025US 12,245,442 B2Institute of Microelectronics, Chinese Academy of Sciences
- Semiconductor chip including chip pads of different surface areas, and semiconductor package including the semiconductor chip25 Jun 2024US 12,021,515 B2SK hynix Inc.
- Semiconductor device21 May 2024US 11,990,475 B2Samsung Electronics Co., Ltd.
- Gate oxide layer including nitrogen for semiconductor device5 Feb 2026US 2026/0040656 A1
- Semiconductor device30 Oct 2025US 2025/0336824 A1Samsung Electronics Co., Ltd.
- Vertical field effect device and method of manufacturing4 Sep 2025US 2025/0280561 A1Ideaded, S.L.
- Vertical field effect device and method of manufacturing10 Apr 2025US 2025/0120111 A1Ideaded, S.L.
- Complementary metal-oxide-semiconductor circuit12 Dec 2024US 2024/0413159 A1Invention and Collaboration Laboratory, Inc.
Most cited
By later US patents
- High voltage MOS transistors123US 4,811,075 APower Integrations, Inc. · 1989
- Integrated trench-transistor structure and fabrication process89US 4,881,105 AInternational Business Machines Corporation · 1989
- CMOS structure with varying gate oxide thickness and with both different and like conductivity-type gate electrodes82US 5,497,021 AFuji Electric Co., Ltd. · 1996
- Method of producing a semiconductor device having two MIS transistor circuits62US 5,545,577 AFuji Electric Co., Ltd. · 1996
- Low voltage CMOS process and device with individually adjustable LDD spacers50US 6,222,238 B1VLSI Technology, Inc. · 2001