Semiconductor device, method of manufacturing the same and electronic device including the device
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong Zhu
Life of this patent
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Abstract
There are provided a semiconductor device, a method of manufacturing the same, and an electronic device including the device. According to an embodiment, the semiconductor device may include a substrate, and a first device and a second device formed on the substrate. Each of the first device and the second device includes a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, and also a gate stack surrounding a periphery of the channel layer. The channel layer of the first device and the channel layer of the second device are substantially co-planar.
Claims19
A semiconductor device, comprising:
- a substrate;
- a first device and a second device formed on the substrate, wherein each of the first device and the second device comprises:
- a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence;
- and
- a gate stack surrounding a periphery of the channel layer,
- wherein the semiconductor device further comprises a first dielectric film formed on the first device and a second dielectric film formed on the second device, and the first dielectric film is in contact with the second dielectric film, and
- wherein the first dielectric film is in contact with the second dielectric film in a direction parallel to a surface of the substrate, an orthogonal projection of the first dielectric film on the substrate overlaps at least partially with an orthogonal projection of the second dielectric film on the substrate.
Dependencies are inferred from the claim text.