Gate oxide layer including nitrogen for semiconductor device

Abstract

The present disclosure generally relates to semiconductor processing for forming a gate oxide layer and a corresponding semiconductor device. In an example, a semiconductor device includes a semiconductor substrate, a gate oxide layer, a gate electrode, a first source/drain region, and a second source/drain region. The gate oxide layer is on the semiconductor substrate. The gate oxide layer has a thickness less than or equal to 25 Angstroms. The gate oxide layer includes nitrogen and includes a peak concentration of nitrogen that is equal to or greater than 20 atomic percent. The gate electrode is over the gate oxide layer. The first source/drain region is in the semiconductor substrate. The second source/drain region is in the semiconductor substrate. The first source/drain region and the second source/drain region are on opposing lateral sides of the gate electrode.

Dependencies are inferred from the claim text.