Complementary metal-oxide-semiconductor circuit

A CMOS circuit, comprising:

• a bulk semiconductor substrate with an original semiconductor surface;
• a first active region and a second active region formed based on the bulk semiconductor substrate;
• a PMOS transistor formed based on the first active region and having a first doped body and a first channel;
• a first localized isolating layer under the PMOS transistor and at least isolating the first doped body from the bulk semiconductor substrate;
• a first shallow trench isolation region surrounding the first active region and the first localized isolating layer;
• an NMOS transistor formed based on the second active region and having a second doped body and a second channel;
• a second localized isolating layer under the NMOS transistor and at least partially isolating the second doped body from the bulk semiconductor substrate;
• and
• a second shallow trench isolation region surrounding the second active region and the second localized isolating layer;
• wherein a length of the first channel is the same or substantially the same as a length of the second channel.