H10D 64/025
Forming recessed gates
Official title: {forming recessed gates, e.g. by using local oxidation}
H10D64/025 (Forming recessed gates) appears on 1,565 US grants and 1,708 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,565
- Published applications
- 1,708
- Assignees
- 272
- Inventors
- 2,349
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 1 | 0 |
| 1992 | 4 | 0 |
| 1993 | 5 | 0 |
| 1994 | 9 | 0 |
| 1995 | 8 | 0 |
| 1996 | 13 | 0 |
| 1997 | 5 | 0 |
| 1998 | 24 | 0 |
| 1999 | 30 | 0 |
| 2000 | 38 | 0 |
| 2001 | 43 | 12 |
| 2002 | 23 | 30 |
| 2003 | 29 | 27 |
| 2004 | 19 | 36 |
| 2005 | 29 | 69 |
| 2006 | 26 | 76 |
| 2007 | 46 | 143 |
| 2008 | 65 | 163 |
| 2009 | 93 | 129 |
| 2010 | 122 | 84 |
| 2011 | 106 | 95 |
| 2012 | 68 | 72 |
| 2013 | 66 | 43 |
| 2014 | 68 | 51 |
| 2015 | 53 | 84 |
| 2016 | 72 | 60 |
| 2017 | 71 | 42 |
| 2018 | 42 | 50 |
| 2019 | 46 | 40 |
| 2020 | 31 | 43 |
| 2021 | 52 | 73 |
| 2022 | 59 | 74 |
| 2023 | 51 | 63 |
| 2024 | 53 | 63 |
| 2025 | 48 | 35 |
| 2026 | 20 | 51 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Threshold voltage modulation by gate height variation22 Sep 2026US 12,745,430 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for reducing damage to floating gate polysilicon during etching15 Sep 2026US 12,740,085 B2Shanghai Huali Integrated Circuit Corporation
- Gas phase treatment for manufacturing semiconductor structure8 Sep 2026US 12,733,421 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor element, electronic system including the semiconductor element, and method of fabricating the semiconductor element18 Aug 2026US 12,713,582 B2Samsung Electronics Co., Ltd.
- Semiconductor device including gate lines with a conductive layer having less nitrogen than an interface layer and method of fabricating the same18 Aug 2026US 12,713,882 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing the same8 Oct 2026US 2026/0314282 A1MagnaChip Semiconductor, Ltd.
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
- Sic device with vertical field plates and method of manufacturing the same1 Oct 2026US 2026/0304886 A1United Microelectronics Corp.
- Monolithic microwave integrated circuit1 Oct 2026US 2026/0304907 A1Qorvo US, Inc.
- Apparatus including fet and integrated sbd located inside of fet unit cell1 Oct 2026US 2026/0304916 A1Microchip Technology Incorporated
Most cited
By later US patents
- Method for fabricating a MOSFET device271US 6,534,352 B1Hynix Semiconductor Inc. · 2003
- Method for forming trench and method for fabricating semiconductor device using the same224US 7,981,806 B2Hynix Semiconductor Inc. · 2011
- Method of manufacturing a semiconductor device which includes forming a dummy gate210US 6,054,355 AKabushiki Kaisha Toshiba · 2000
- Transistor with low resistance tip and method of fabrication in a CMOS process173US 6,165,826 AIntel Corporation · 2000
- MISFET semiconductor device having relative impurity concentration levels between layers160US 6,323,525 B1Kabushiki Kaisha Toshiba · 2001