H10D 64/027
By etching at gate locations
Official title: {by etching at gate locations}
H10D64/027 (By etching at gate locations) appears on 1,385 US grants and 1,581 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,385
- Published applications
- 1,581
- Assignees
- 244
- Inventors
- 2,079
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 6 | 0 |
| 1997 | 3 | 0 |
| 1998 | 14 | 0 |
| 1999 | 21 | 0 |
| 2000 | 23 | 0 |
| 2001 | 31 | 10 |
| 2002 | 16 | 24 |
| 2003 | 23 | 23 |
| 2004 | 16 | 32 |
| 2005 | 28 | 67 |
| 2006 | 25 | 74 |
| 2007 | 44 | 140 |
| 2008 | 62 | 157 |
| 2009 | 91 | 127 |
| 2010 | 117 | 82 |
| 2011 | 104 | 94 |
| 2012 | 66 | 70 |
| 2013 | 66 | 41 |
| 2014 | 65 | 49 |
| 2015 | 48 | 72 |
| 2016 | 66 | 51 |
| 2017 | 56 | 35 |
| 2018 | 32 | 42 |
| 2019 | 37 | 32 |
| 2020 | 23 | 34 |
| 2021 | 47 | 70 |
| 2022 | 56 | 67 |
| 2023 | 42 | 56 |
| 2024 | 50 | 61 |
| 2025 | 43 | 32 |
| 2026 | 19 | 39 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Threshold voltage modulation by gate height variation22 Sep 2026US 12,745,430 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for reducing damage to floating gate polysilicon during etching15 Sep 2026US 12,740,085 B2Shanghai Huali Integrated Circuit Corporation
- Gas phase treatment for manufacturing semiconductor structure8 Sep 2026US 12,733,421 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor element, electronic system including the semiconductor element, and method of fabricating the semiconductor element18 Aug 2026US 12,713,582 B2Samsung Electronics Co., Ltd.
- Semiconductor device including gate lines with a conductive layer having less nitrogen than an interface layer and method of fabricating the same18 Aug 2026US 12,713,882 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing the same8 Oct 2026US 2026/0314282 A1MagnaChip Semiconductor, Ltd.
- Monolithic microwave integrated circuit1 Oct 2026US 2026/0304907 A1Qorvo US, Inc.
- Apparatus including fet and integrated sbd located inside of fet unit cell1 Oct 2026US 2026/0304916 A1Microchip Technology Incorporated
- Composition, method of treating metal-containing film and method of manufacturing electronic device24 Sep 2026US 2026/0293557 A1Samsung Electronics Co., Ltd.
- Gate oxide stack for sic mosfet10 Sep 2026US 2026/0271371 A1Microchip Technology Incorporated
Most cited
By later US patents
- Method for fabricating a MOSFET device271US 6,534,352 B1Hynix Semiconductor Inc. · 2003
- Method for forming trench and method for fabricating semiconductor device using the same224US 7,981,806 B2Hynix Semiconductor Inc. · 2011
- Method of manufacturing a semiconductor device which includes forming a dummy gate210US 6,054,355 AKabushiki Kaisha Toshiba · 2000
- MISFET semiconductor device having relative impurity concentration levels between layers160US 6,323,525 B1Kabushiki Kaisha Toshiba · 2001
- High mobility enhancement mode FET159US 8,803,242 B2Eta Semiconductor.Inc · 2014