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US 7,981,806 B2Granted
Method for forming trench and method for fabricating semiconductor device using the same
AssigneeHynix Semiconductor Inc.
InventorTae-Woo Jung
Life of this patent
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Abstract
A method for forming a trench includes providing a substrate, and forming the trench in the substrate using a gas containing chlorine (Cl2) gas as a main etch gas and SiFX gas as an additive gas, wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Cl2 gas and the SiFX gas.
Claims22
A method for forming a trench, the method comprising:
- providing a substrate;
- and
- forming the trench in the substrate using a gas containing chlorine (Cl2) gas as a main etch gas and SiFX gas as an additive gas,
- wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Cl2 and the SiFX gas,
- wherein the sidewall of the trench is passivated by a polymer produced by the reaction of the Cl2 gas and the SiFX gas where x=4.
2 more elements
A method for fabricating a semiconductor device having a recess gate, the method comprising:
- providing a substrate;
- forming a hard mask pattern over the substrate;
- and
- forming a trench for the recess gate having a substantially vertical profile by etching the substrate using the hard mask pattern as an etch barrier and using a gas containing Cl2 gas as a main gas and SiFx gas as an additive gas,
- wherein the forming of the trench comprises passivating a sidewall of the trench with a polymer produced by reaction of the Cl2 gas and the SiFx gas where x=4.
2 more elements
Dependencies are inferred from the claim text.