Composition, method of treating metal-containing film and method of manufacturing electronic device

A method of manufacturing an electronic device including a transistor, the transistor comprising a channel, a source and a drain spaced apart from each other and electrically connected to the channel, a gate electrode, and a gate insulating film between the gate electrode and the channel, the method comprising:

• providing a barrier layer, the barrier layer comprising a metal nitride, a metal oxynitride, or a combination thereof;
• providing a conductive layer including a conductive metal;
• and
• forming the gate electrode by etching a portion of the barrier layer and a portion of the conductive layer using a composition, the composition comprising an oxidizing agent, phosphoric acid, an organic acid, and an etching controller,
• wherein the oxidizing agent comprises hydrogen peroxide and an iodine-containing compound,
• the etching controller comprises a nitrogen-containing compound, and
• the composition has a pH of less than 1.

A composition comprising:

• an oxidizing agent;
• phosphoric acid;
• an organic acid;
• and
• an etching controller,
• wherein the oxidizing agent comprises hydrogen peroxide and an iodine-containing compound,
• the etching controller comprises a nitrogen-containing compound, and
• the composition has a pH of less than 1.