Monolithic microwave integrated circuit

Abstract

Disclosed is a method for fabricating monolithic microwave integrated circuits (MMICs) including forming high-voltage-type gallium nitride (GaN) high electron mobility transistors (HEMTs) with gate lengths between 10 nm and 100 nm. In some embodiments, gate lengths are between 10 nm and 50 nm. In some embodiments the HEMTs are gallium nitride transistors. Dielectric layers are deposited across the entire wafer to create metal-insulator-metal (MIM) capacitors in non-transistor regions. The dielectrics surrounding the gates are selectively removed without excessive overetching, leveraging the high-voltage-gate structure to reduce parasitic capacitances. This process enables efficient integration of HEMTs with passive components on a single wafer, enabling high-frequency performance for applications such as 5G and 6G communication systems.

Dependencies are inferred from the claim text.