H10D 64/0112
Using conductive layers comprising silicides
Official title: {using conductive layers comprising silicides}
H10D64/0112 (Using conductive layers comprising silicides) appears on 4,076 US grants and 4,105 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,076
- Published applications
- 4,105
- Assignees
- 525
- Inventors
- 6,032
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 5 | 0 |
| 1983 | 3 | 0 |
| 1984 | 6 | 0 |
| 1985 | 16 | 0 |
| 1986 | 9 | 0 |
| 1987 | 15 | 0 |
| 1988 | 10 | 0 |
| 1989 | 16 | 0 |
| 1990 | 13 | 0 |
| 1991 | 24 | 0 |
| 1992 | 16 | 0 |
| 1993 | 24 | 0 |
| 1994 | 30 | 0 |
| 1995 | 28 | 0 |
| 1996 | 29 | 0 |
| 1997 | 47 | 0 |
| 1998 | 52 | 0 |
| 1999 | 87 | 0 |
| 2000 | 157 | 0 |
| 2001 | 199 | 34 |
| 2002 | 140 | 142 |
| 2003 | 137 | 104 |
| 2004 | 111 | 103 |
| 2005 | 73 | 130 |
| 2006 | 86 | 148 |
| 2007 | 77 | 130 |
| 2008 | 90 | 130 |
| 2009 | 79 | 96 |
| 2010 | 85 | 79 |
| 2011 | 89 | 83 |
| 2012 | 71 | 131 |
| 2013 | 107 | 142 |
| 2014 | 129 | 119 |
| 2015 | 120 | 180 |
| 2016 | 169 | 196 |
| 2017 | 193 | 188 |
| 2018 | 168 | 178 |
| 2019 | 198 | 202 |
| 2020 | 202 | 216 |
| 2021 | 163 | 222 |
| 2022 | 174 | 235 |
| 2023 | 162 | 223 |
| 2024 | 180 | 268 |
| 2025 | 188 | 259 |
| 2026 | 88 | 167 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device6 Oct 2026US 12,757,443 B2Samsung Electronics Co., Ltd.
- Semiconductor device29 Sep 2026US 12,751,072 B2United Microelectronics Corp.
- Formation of metal cap on metal silicide layer for contact resistance reduction15 Sep 2026US 12,740,092 B2APPLIED Materials.Inc.
- Methods of forming semiconductor structures15 Sep 2026US 12,740,117 B2APPLIED Materials.Inc.
- Semiconductor device and method for manufacturing the same15 Sep 2026US 12,740,119 B2Mitsubishi Electric Corporation
- Method of forming a recessed terminal and electronic device including the recessed terminal1 Oct 2026US 2026/0304881 A1STMicroelectronics International N. V.
- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
- Semiconductor Device and Method of Manufacturing24 Sep 2026US 2026/0293202 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for manufacturing semiconductor device24 Sep 2026US 2026/0293267 A1Denso Corporation
- Laminated structure including metal silicide, method of manufacturing the same, and semiconductor device including the laminated structure24 Sep 2026US 2026/0293268 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Method for forming metal layer using atomic layer deposition892US 6,174,809 B1Samsung Electronics Co., Ltd. · 2001
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015
- Contact structure and method of forming518US 9,831,183 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Wiring structure of semiconductor device and method for manufacturing the same486US 5,998,870 ASamsung Electronics Co., Ltd. · 1999