H10D 64/0111
To group iv semiconductors
Official title: {to Group IV semiconductors}
H10D64/0111 (To group iv semiconductors) appears on 5,955 US grants and 5,433 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,955
- Published applications
- 5,433
- Assignees
- 783
- Inventors
- 8,631
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 9 | 0 |
| 1978 | 14 | 0 |
| 1979 | 7 | 0 |
| 1980 | 10 | 0 |
| 1981 | 12 | 0 |
| 1982 | 14 | 0 |
| 1983 | 9 | 0 |
| 1984 | 21 | 0 |
| 1985 | 38 | 0 |
| 1986 | 23 | 0 |
| 1987 | 40 | 0 |
| 1988 | 38 | 0 |
| 1989 | 55 | 0 |
| 1990 | 48 | 0 |
| 1991 | 94 | 0 |
| 1992 | 78 | 0 |
| 1993 | 83 | 0 |
| 1994 | 67 | 0 |
| 1995 | 58 | 0 |
| 1996 | 52 | 0 |
| 1997 | 73 | 0 |
| 1998 | 95 | 0 |
| 1999 | 137 | 0 |
| 2000 | 210 | 0 |
| 2001 | 256 | 57 |
| 2002 | 186 | 206 |
| 2003 | 180 | 137 |
| 2004 | 157 | 151 |
| 2005 | 118 | 177 |
| 2006 | 105 | 184 |
| 2007 | 102 | 162 |
| 2008 | 113 | 169 |
| 2009 | 107 | 118 |
| 2010 | 105 | 113 |
| 2011 | 113 | 116 |
| 2012 | 92 | 175 |
| 2013 | 144 | 185 |
| 2014 | 176 | 163 |
| 2015 | 189 | 281 |
| 2016 | 243 | 283 |
| 2017 | 272 | 267 |
| 2018 | 236 | 242 |
| 2019 | 270 | 287 |
| 2020 | 293 | 291 |
| 2021 | 214 | 296 |
| 2022 | 227 | 280 |
| 2023 | 202 | 280 |
| 2024 | 220 | 317 |
| 2025 | 231 | 295 |
| 2026 | 113 | 201 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Methods of growing metal-containing films6 Oct 2026US 12,753,498 B2APPLIED Materials.Inc.
- Semiconductor device6 Oct 2026US 12,757,443 B2Samsung Electronics Co., Ltd.
- Semiconductor device29 Sep 2026US 12,751,072 B2United Microelectronics Corp.
- Formation of metal cap on metal silicide layer for contact resistance reduction15 Sep 2026US 12,740,092 B2APPLIED Materials.Inc.
- Methods of forming semiconductor structures15 Sep 2026US 12,740,117 B2APPLIED Materials.Inc.
- Realtime wireless synchronization of live event audio stream with a video recording8 Oct 2026US 2026/0314022 A1Bygge Technologies Inc.
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming a recessed terminal and electronic device including the recessed terminal1 Oct 2026US 2026/0304881 A1STMicroelectronics International N. V.
- Method of manufacturing semiconductor device1 Oct 2026US 2026/0305200 A1Fuji Electric Co., Ltd.
- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Method for forming metal layer using atomic layer deposition892US 6,174,809 B1Samsung Electronics Co., Ltd. · 2001
- Method for forming a thin layer on a semiconductor substrate and apparatus therefor628US 5,178,682 AMitsubishi Denki Kabushiki Kaisha · 1993
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004