H10D 64/0115
To silicon carbide
Official title: {to silicon carbide}
H10D64/0115 (To silicon carbide) appears on 468 US grants and 551 published applications in this corpus.
Search patents in H10D- Granted patents
- 468
- Published applications
- 551
- Assignees
- 143
- Inventors
- 790
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 5 |
| 2002 | 5 | 8 |
| 2003 | 3 | 4 |
| 2004 | 10 | 9 |
| 2005 | 7 | 9 |
| 2006 | 6 | 8 |
| 2007 | 4 | 4 |
| 2008 | 3 | 10 |
| 2009 | 7 | 10 |
| 2010 | 6 | 10 |
| 2011 | 5 | 19 |
| 2012 | 6 | 18 |
| 2013 | 17 | 23 |
| 2014 | 29 | 27 |
| 2015 | 32 | 39 |
| 2016 | 38 | 49 |
| 2017 | 35 | 41 |
| 2018 | 40 | 37 |
| 2019 | 39 | 40 |
| 2020 | 38 | 20 |
| 2021 | 18 | 35 |
| 2022 | 25 | 19 |
| 2023 | 14 | 34 |
| 2024 | 18 | 24 |
| 2025 | 27 | 25 |
| 2026 | 15 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with metal nitride layer and a method of manufacturing thereof25 Aug 2026US 12,720,845 B2Infineon Technologies AG
- Method of manufacturing ohmic contacts of an electronic device, with thermal budget optimization18 Aug 2026US 12,713,675 B2STMicroelectronics S,r.l.
- Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor device11 Aug 2026US 12,707,696 B2Infineon Technologies AG
- Silicon carbide device and method for forming a silicon carbide device11 Aug 2026US 12,707,957 B2Infineon Technologies AG
- Method for creating an ohmic contact on a high-power electrical diode4 Aug 2026US 12,701,764 B2STMicroelectronics International N. V.
- Realtime wireless synchronization of live event audio stream with a video recording8 Oct 2026US 2026/0314022 A1Bygge Technologies Inc.
- Method of stress release in silicon carbide devices1 Oct 2026US 2026/0305201 A1STMicroelectronics International N. V.
- Semiconductor device and method for manufacturing semiconductor device24 Sep 2026US 2026/0293267 A1Denso Corporation
- Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device13 Aug 2026US 2026/0239702 A1Fuji Electric Co., Ltd.
- Silicon carbide device with metallic interface layers9 Jul 2026US 2026/0198052 A1Infineon Technologies AG
Most cited
By later US patents
- Semiconductor device and method for manufacturing same126US 7,507,999 B2Panasonic Corporation · 2009
- Method for forming an ohmic electrode120US 6,110,813 AMatsushita Electric Industrial Co., Ltd. · 2000
- Method for forming ohmic electrode, and semiconductor device84US 6,274,889 B1Matsushita Electric Industrial Co., Ltd. · 2001
- Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same82US 6,794,684 B2Cree, Inc. · 2004
- Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material70US 6,936,850 B2SiCED Electronics Development GmbH & Co. KG · 2005