Back to results
US 6,274,889 B1Granted
Method for forming ohmic electrode, and semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYorito Ota, Hiroyuki Masato, Yasuhito Kumabuchi, Makoto Kitabatake
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a single substrate made of silicon carbide; an epitaxial film made of AlxInyGa(1−x−y)N which is selectively formed on the single substrate; an amplifier section including a gate formed on the single substrate and a source layer and a drain layer which are formed within the single substrate; and another amplifier section formed on the epitaxial film.
Claims3
A semiconductor device comprising:
- a single substrate made of silicon carbide;
- an epitaxial film made of AlxInyGa(1−x−y)N (where 0≦x≦1 and 0≦y≦1) and selectively formed on the single substrate;
- an amplifier section comprising a gate formed on the single substrate and a source layer and a drain layer which are formed within the single substrate;
- and
- another amplifier section formed on the epitaxial film.
2 more elements
A semiconductor device comprising:
- a single substrate made of silicon carbide;
- a first epitaxial film formed on the single substrate and made of AlxInyGa(1−x−y)N (where 0≦x≦1 and 0≦y≦1) lattice-matching with silicon carbide;
- a second epitaxial film selectively formed on the first epitaxial film and made of AlxInyGa(1−x−y)N (where 0≦x≦1 and 0≦y≦1);
- an amplifier section comprising a gate formed on the first epitaxial film and a source layer and a drain layer which are formed within the single substrate;
- and
- another amplifier section formed on the second epitaxial film.
3 more elements
Dependencies are inferred from the claim text.