Method for forming an ohmic electrode
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYorito Ota, Hiroyuki Masato, Yasuhito Kumabuchi, Makoto Kitabatake
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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYorito Ota, Hiroyuki Masato, Yasuhito Kumabuchi, Makoto Kitabatake
Estimating the term…
A first metal film and a second metal film, both of which are made of Ni or the like, are deposited on the upper surface of a substrate made of SiC. In such a state, the interface between the first metal film and the substrate and the interface between the second metal film and the substrate both form a Schottky contact. Next, laser light is irradiated from above the upper surface of the substrate only onto the first metal film on the substrate after the diameter of the top end of the laser light has been reduced. Thus, since the metal-semiconductor interface between the first metal film and the substrate is turned into an alloy owing to the energy of the laser light without heating the entire substrate, an ohmic contact can be formed in the interface between the first metal film and the substrate. As a result, an ohmic electrode can be constituted by the first metal film.
A method for forming an ohmic electrode, comprising the steps of:
Dependencies are inferred from the claim text.