H10D 64/011
Of electrodes ohmically coupled to a semiconductor
Official title: {of electrodes ohmically coupled to a semiconductor}
H10D64/011 (Of electrodes ohmically coupled to a semiconductor) appears on 7,952 US grants and 7,445 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,952
- Published applications
- 7,445
- Assignees
- 1,175
- Inventors
- 12,096
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 18 | 0 |
| 1978 | 22 | 0 |
| 1979 | 14 | 0 |
| 1980 | 21 | 0 |
| 1981 | 20 | 0 |
| 1982 | 22 | 0 |
| 1983 | 20 | 0 |
| 1984 | 34 | 0 |
| 1985 | 56 | 0 |
| 1986 | 43 | 0 |
| 1987 | 59 | 0 |
| 1988 | 55 | 0 |
| 1989 | 69 | 0 |
| 1990 | 62 | 0 |
| 1991 | 124 | 0 |
| 1992 | 100 | 0 |
| 1993 | 107 | 0 |
| 1994 | 89 | 0 |
| 1995 | 81 | 0 |
| 1996 | 64 | 0 |
| 1997 | 99 | 0 |
| 1998 | 113 | 0 |
| 1999 | 156 | 0 |
| 2000 | 227 | 0 |
| 2001 | 276 | 63 |
| 2002 | 204 | 233 |
| 2003 | 208 | 172 |
| 2004 | 179 | 180 |
| 2005 | 142 | 214 |
| 2006 | 136 | 214 |
| 2007 | 116 | 183 |
| 2008 | 128 | 192 |
| 2009 | 127 | 134 |
| 2010 | 124 | 136 |
| 2011 | 134 | 166 |
| 2012 | 117 | 225 |
| 2013 | 190 | 284 |
| 2014 | 265 | 294 |
| 2015 | 334 | 469 |
| 2016 | 389 | 390 |
| 2017 | 400 | 433 |
| 2018 | 362 | 397 |
| 2019 | 410 | 440 |
| 2020 | 418 | 421 |
| 2021 | 290 | 388 |
| 2022 | 295 | 390 |
| 2023 | 256 | 388 |
| 2024 | 300 | 407 |
| 2025 | 308 | 393 |
| 2026 | 156 | 239 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Methods of growing metal-containing films6 Oct 2026US 12,753,498 B2APPLIED Materials.Inc.
- Semiconductor device6 Oct 2026US 12,757,443 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,472 B2Samsung Electronics Co., Ltd.
- Semiconductor device29 Sep 2026US 12,751,072 B2United Microelectronics Corp.
- Two-dimensional (2D) material for oxide semiconductor (OS) ferroelectric field-effect transistor (FeFET) device22 Sep 2026US 12,745,427 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Realtime wireless synchronization of live event audio stream with a video recording8 Oct 2026US 2026/0314022 A1Bygge Technologies Inc.
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Source/drain contacts connecting 2-d material layer and method for forming the same8 Oct 2026US 2026/0314276 A1National Yang Ming.Chiao Tung University
- Method of forming a recessed terminal and electronic device including the recessed terminal1 Oct 2026US 2026/0304881 A1STMicroelectronics International N. V.
- Method of manufacturing semiconductor device1 Oct 2026US 2026/0305200 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Method for forming metal layer using atomic layer deposition892US 6,174,809 B1Samsung Electronics Co., Ltd. · 2001
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method for forming a thin layer on a semiconductor substrate and apparatus therefor628US 5,178,682 AMitsubishi Denki Kabushiki Kaisha · 1993