H10D 64/0116
To group iii-v semiconductors
Official title: {to Group III-V semiconductors}
H10D64/0116 (To group iii-v semiconductors) appears on 633 US grants and 554 published applications in this corpus.
Search patents in H10D- Granted patents
- 633
- Published applications
- 554
- Assignees
- 253
- Inventors
- 1,385
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 6 | 0 |
| 1981 | 7 | 0 |
| 1982 | 8 | 0 |
| 1983 | 6 | 0 |
| 1984 | 3 | 0 |
| 1985 | 7 | 0 |
| 1986 | 7 | 0 |
| 1987 | 8 | 0 |
| 1988 | 2 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 18 | 0 |
| 1992 | 9 | 0 |
| 1993 | 8 | 0 |
| 1994 | 7 | 0 |
| 1995 | 11 | 0 |
| 1996 | 7 | 0 |
| 1997 | 7 | 0 |
| 1998 | 11 | 0 |
| 1999 | 9 | 0 |
| 2000 | 12 | 0 |
| 2001 | 16 | 5 |
| 2002 | 14 | 15 |
| 2003 | 17 | 24 |
| 2004 | 14 | 19 |
| 2005 | 15 | 21 |
| 2006 | 16 | 19 |
| 2007 | 9 | 14 |
| 2008 | 9 | 14 |
| 2009 | 17 | 7 |
| 2010 | 9 | 8 |
| 2011 | 9 | 12 |
| 2012 | 12 | 18 |
| 2013 | 11 | 20 |
| 2014 | 16 | 39 |
| 2015 | 38 | 47 |
| 2016 | 33 | 32 |
| 2017 | 31 | 24 |
| 2018 | 28 | 32 |
| 2019 | 28 | 40 |
| 2020 | 31 | 34 |
| 2021 | 18 | 24 |
| 2022 | 20 | 20 |
| 2023 | 13 | 20 |
| 2024 | 13 | 17 |
| 2025 | 17 | 17 |
| 2026 | 7 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Methods of growing metal-containing films6 Oct 2026US 12,753,498 B2APPLIED Materials.Inc.
- GaN-based trench metal oxide Schottky barrier diode and preparation method therefor21 Jul 2026US 12,690,204 B2Sun Yat-Sen University
- Low resistance metal to semiconductor contacts for integrated NMOS and PMOS transistors23 Jun 2026US 12,666,688 B2Intel Corporation
- Termination structures for semiconductor devices21 Apr 2026US 12,610,764 B2Virginia Tech Intellectual Properties, Inc.
- Mid-valent molybdenum complexes for thin film deposition7 Apr 2026US 12,595,276 B2Intel Corporation
- Hemt devices with low-resistance ohmic contacts via barrier regrowth20 Aug 2026US 2026/0247679 A1The Regents of the University of Michigan
- Method for manufacturing high electron mobility transistor18 Jun 2026US 2026/0173420 A1Ultraband Technologies, Inc.
- Group iii-n device including contacts with multiple conductive columns11 Jun 2026US 2026/0164751 A1
- Method for manufacturing high electron mobility transistor16 Apr 2026US 2026/0107488 A1Ultraband Technologies, Inc.
- Low Resistivity Ohmic Contact to Group III-V Device16 Apr 2026US 2026/0107534 A1Newport Fab, LLC dba Tower Semiconductor Newport Beach
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Gallium nitride-based III-V group compound semiconductor device and method of producing the same291US 5,563,422 ANichia Chemical Industries, Ltd. · 1996
- Automated package dimensioning system191US 7,527,205 B2Metrologic Instruments, Inc. · 2009
- Planar laser illumination and imaging (PLIIM) system employing wavefront control methods for reducing the power of speckle-pattern noise digital images acquired by said system180US 6,736,321 B2Metrologic Instruments, Inc. · 2004
- Automated method of and system for dimensioning objects over a conveyor belt structure by applying contouring tracing, vertice detection, corner point detection, and corner point reduction methods to two-dimensional range data maps of the space above the conveyor belt captured by an amplitude modulated laser scanning beam171US 6,971,580 B2Metrologic Instruments, Inc. · 2005