Gallium nitride-based III-V group compound semiconductor device and method of producing the same
AssigneeNichia Chemical Industries, Ltd.
InventorsShuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
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Abstract
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Claims49
A gallium nitride-based III-V Group compound semiconductor device, comprising:
- a substrate having first and second major surface;
- a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer;
- a first electrode provided in electrical contact with said n-type semiconductor layer;
- and
- a light-transmitting, second electrode provided in contact with said p-type semiconductor layer, and comprising a layer of nickel or a layer comprising nickel and gold, said second electrode establishing an ohmic contact with said p-type semiconductor layer.
A gallium nitride-based III-V Group compound semiconductor device, comprising:
- a substrate having first and second major surfaces;
- a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer;
- a first electrode provided n contact with said n-type semi-conductor layer and comprising a first film comprising a combination of titanium with aluminum, and a second film provided on said first film and comprising a high-melting point metallic material having a melting point higher than aluminum, said first electrode establishing an ohmic contact with said n-type semiconductor layer;
- and
- a second electrode provided in electrical contact with said p-type semiconductor layer.
A gallium nitride-based compound III-V group semiconductor device, comprising:
- a substrate having first and second major surfaces;
- a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer;
- a first ohmic electrode provided in contact with said n-type semiconductor layer, and comprising a combination of titanium with aluminum;
- and
- a light-transmitting, second ohmic electrode provided to cover substantially the entire surface of said p-type semiconductor layer.
A gallium nitride-based compound III-V Group semiconductor device, comprising:
- a substrate having first and second major surfaces;
- a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer;
- a first electrode provided in electrical contact with said n-type semiconductor layer;
- and
- a second electrode provided in contact with said p-type semiconductor layer and comprising a layer of nickel or a layer comprising nickel and gold, said layer of nickel or said layer comprising nickel and gold being provided in direct contact with said p-type semiconductor layer, said second electrode establishing an ohmic contact with said p-type semiconductor layer.
A gallium nitride-based compound III-V Group semiconductor device, comprising:
- a substrate having first and second major surfaces;
- a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer;
- and
- an electrode assembly comprising a metallic material annealed to have an ohmic contact with the compound semiconductor layer, said electrode assembly including;
- a first electrode provided in contact with said n-type semiconductor layer and comprising titanium and aluminum, or titanium and gold;
- and
- a second electrode provided in contact with said p-type semiconductor layer and comprising nickel and gold.
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said n-type semiconductor layer, said electrode comprising titanium and aluminum.
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with an etched surface of said n-type semiconductor layer, said electrode comprising titanium and gold, and annealed at 400.degree. C. or more.
A gallium nitride-based III-V Group compound semiconductor device, comprising an n-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said n-type semiconductor layer, said electrode comprising titanium, aluminum and gold.
A gallium nitride-based III-V Group compound semiconductor device, comprising a p-type gallium nitride-based III-V Group compound semiconductor layer, and an ohmic electrode provided in direct contact with said p-type semiconductor layer, said electrode comprising nickel and gold.
Dependencies are inferred from the claim text.