Group iii-n device including contacts with multiple conductive columns
OwnerDong Seup Lee, Takayuki Enda +2inventors
InventorsDong Seup Lee, Takayuki Enda, Kevin Lee, Jungwoo Joh
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Abstract
Semiconductor devices including contacts with multiple conductive columns are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a III-N heterojunction structure is disposed over the semiconductor substrate. The III-N heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A contact is disposed in at least one of the source region and a drain region, where the contact includes multiple conductive columns coupled to the III-N heterojunction structure.
Claims29
A semiconductor device, comprising:
- a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region between the gate region and the drain region;
- a III-N heterojunction structure over the semiconductor substrate, the III-N heterojunction structure including a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer;
- and
- a contact in at least one of the source region and the drain region, the contact including multiple conductive columns coupled to the III-N heterojunction structure.
A method, comprising:
- forming a III-N heterojunction structure over a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region between the gate region and the drain region, the III-N heterojunction structure including a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer;
- and
- forming a contact in at least one of the source region and the drain region, the contact including multiple conductive columns coupled to the III-N heterojunction structure.
Dependencies are inferred from the claim text.