Low Resistivity Ohmic Contact to Group III-V Device

Abstract

A semiconductor structure includes a group III-V device, a dielectric layer over the group III-V device, and a contact hole in the dielectric layer over the group III-V device. A nickel-platinum (NiPt) liner is situated in the contact hole directly contacting the group III-V device. The NiPt liner may have a Ni composition from approximately forty percent to approximately ninety five percent (40% ≲ Ni ≲ 95%). The NiPt liner may directly contact P type gallium arsenide (GaAs). A contact resistivity between the NiPt liner and the group III-V device may be approximately one micro-Ohm-centimeter-squared (approximately 1 × 10−6 Ω•cm2).

Dependencies are inferred from the claim text.