GaN-based trench metal oxide Schottky barrier diode and preparation method therefor

A GaN-based trench metal oxide Schottky barrier diode, the GaN-based trench metal oxide Schottky barrier diode from top to bottom comprises:

• a cathode covering a substrate;
• the substrate;
• an n-type lightly doped epitaxial layer;
• a p-type high-concentration GaN layer located in a bottom of a trench, a dielectric layer on an inner surface of the trench;
• an anode located on an upper surface of the GaN-based trench metal oxide Schottky barrier diode, wherein a plurality of parallel arranged trench structures are formed on a surface of the n-type lightly doped epitaxial layer,
• wherein the dielectric layer covers on an inner wall of the trench and located above the p-type high-concentration GaN layer, and a window is provided on a middle position above the p-type high-concentration GaN layer, and
• wherein a tilt angle of a mesa of the GaN-based trench metal oxide Schottky barrier diode is less than 90 degree, and the trench is fully filled with the anode.