Method for manufacturing high electron mobility transistor

Abstract

The present disclosure provides a manufacturing method for a high electron mobility transistor, and the method includes the following steps: providing a semiconductor substrate; forming a p-type layer through patterning at a position that is above the semiconductor substrate and that corresponds to a gate opening; forming a protection layer above the p-type layer, where the protection layer covers a part of the p-type layer; and forming a cover layer above the barrier layer and the p-type layer and around the protection layer, and removing the protection layer to form the gate opening, where the cover layer covers at least a part of an upper surface of the p-type layer, and a material of the cover layer is undoped, un-intentionally doped, or n-type-doped aluminum gallium nitride. Compared with the previous technology, the manufacturing method simplifies an overall process, further reduces a technical threshold, and can separately control and obtain good threshold voltage (Vth) and good conductive impedance (Rds (ON)), so that a product yield can be effectively improved.

Dependencies are inferred from the claim text.