Mid-valent molybdenum complexes for thin film deposition
AssigneeIntel Corporation
InventorsCharles Cameron Mokhtarzadeh, Scott B. Clendenning, Matthew V. Metz
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Abstract
Described herein are IC devices that include molybdenum or a molybdenum compound, such as compounds including oxygen or nitrogen. The molybdenum may be deposited at a high concentration, e.g., at least 50% atomic density. Also described herein are mid-valent molybdenum precursors for depositing molybdenum, and reactions for producing the mid-valent molybdenum precursors. For example, the molybdenum precursors may be generated by reacting a higher-valent molybdenum compound with an amidinate or a formamidinate.
Claims20
An integrated circuit (IC) device comprising:
- a substrate;
- a first layer of high-density molybdenum (Mo) deposited over the substrate, wherein at least 60% of atoms in the Mo first layer are Mo;
- and
- a second layer of high-density Mo deposited over the first layer, wherein at least 60% of atoms in the second layer are Mo.
An integrated circuit (IC) device comprising:
- a channel material;
- and
- a high-density molybdenum (Mo) material deposited over the channel material, wherein, in a first atomic layer of the high-density Mo material nearest to the channel material, at least 60% of atoms in the layer are Mo, and in a second atomic layer over the first atomic layer, at least 60% of atoms are Mo.
A device comprising:
- a semiconductor structure;
- and
- a conductive structure coupled to the semiconductor structure, wherein, in a portion first layer of the conductive structure directly over the semiconductor structure, at least 60% of atoms are molybdenum, and in a second layer of the conductive structure over the first layer, at least 60% of atoms are molybdenum.
Dependencies are inferred from the claim text.